Room-temperature single-electron junction.
نویسندگان
چکیده
منابع مشابه
The Analysis of Coulomb Blockade in Fullerene Single Electron Transistor at Room Temperature
The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...
متن کاملRoom Temperature Hydrogen Sensor Based on Single-Electron Tunneling Between Palladium Nanoparticles
In this paper, we present the results of single-electron tunneling in two-dimensional (2D) hexagonal closed packed arrays of palladium nanoparticles. After inspecting the emergence of Coulomb blockade phenomena, we demonstrate the possibilities of using these arrays as a single-electron tunneling based hydrogen sensor. We assumed arrays of palladium nanoparticles with diameters of 3.5 and 6...
متن کاملCarbon nanotube single-electron transistors at room temperature.
Room-temperature single-electron transistors are realized within individual metallic single-wall carbon nanotube molecules. The devices feature a short (down to approximately 20 nanometers) nanotube section that is created by inducing local barriers into the tube with an atomic force microscope. Coulomb charging is observed at room temperature, with an addition energy of 120 millielectron volts...
متن کاملA Silicon Single-Electron Transistor Memory Operating at Room Temperature
A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the f...
متن کاملFabrication and characterization of room temperature silicon single electron memory
A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ;10 nm and a nanoscale floating gate of dimension ;~7 nm 3 7 nm 3 2 nm!, patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Proceedings of the National Academy of Sciences
سال: 1996
ISSN: 0027-8424,1091-6490
DOI: 10.1073/pnas.93.20.10556